SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

Disclosed is a process for producing a silicon carbide substrate, which enables the reduction in cost for the production of a semiconductor device using the silicon carbide substrate. The process comprises the steps of: providing a SiC substrate (20) comprising single crystalline silicon carbide; placing the SiC substrate (20) in a container (70) and placing a base substrate (10) in the container (70) in such a manner that the base substrate (10) faces one main surface (20B) of the SiC substrate (20); and heating the base substrate (10) in the container (70) at a temperature equal to or higher than the sublimation temperature of silicon carbide that constitutes the base substrate (10) to thereby form a base layer (10) comprising silicon carbide in such a manner that the base layer (10) is in contact with one main surface (20B) of the SiC substrate (20). In the step of forming the base layer (10), a silicon generation source (91) comprising a silicon-containing substance, which is different from the SiC substrate (20) or the base substrate (10), is placed in the container (70).