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ETCHING SYSTEM AND METHOD OF CONTROLLING ETCHING PROCESS CONDITION
ETCHING SYSTEM AND METHOD OF CONTROLLING ETCHING PROCESS CONDITION
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机译:刻画系统和控制刻画过程条件的方法
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摘要
Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.
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