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Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
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机译:具有具有变化的开/关阈值电压的双扩散MOS晶体管的半导体器件及其制造方法
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摘要
A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.
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