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Recessed drift region for HVMOS breakdown improvement
Recessed drift region for HVMOS breakdown improvement
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机译:凹陷漂移区,可改善HVMOS击穿
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摘要
A high-voltage metal-oxide-semiconductor (HVMOS) device having increased breakdown voltage and methods for forming the same are provided. The HVMOS device includes a semiconductor substrate; a gate dielectric on a surface of the semiconductor substrate; a gate electrode on the gate dielectric; a source/drain region adjacent and horizontally spaced apart from the gate electrode; and a recess in the semiconductor substrate and filled with a dielectric material. The recess is between the gate electrode and the source/drain region, and is horizontally spaced apart from the gate electrode.
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