High breakdown voltage element and channel manufacturing method in which channel region and drifting region are isolated by insulating film

摘要

The present invention relates to a high withstand voltage device and a method of manufacturing the same, in which a channel region and a drifting region are separated by an insulating film for manufacturing a high voltage device of 100 V or more using a silicon semiconductor to improve the operation breakdown voltage and reliability of the device. Use only reverse biased pn junctions to sustain the high voltages applied to the drain at the device, without voltage breakdown against low background voltages inside and outside the device, or, in a more advanced manner, use pn junctions inside the device. An insulating film was used for the outside. In order to improve this problem, the present invention utilizes the insulating film isolation method not only inside the device but also inside the device to form a wall of the insulating film between the channel region and the drift region so that the drift region and the source inside the device are formed. It can prevent the current through (punch through) and junction voltage breakdown between the drift region and the channel region, suppress the occurrence of leakage current flowing from the drain to the source, and effectively block the flow to increase the operating breakdown voltage and reliability of the device. I would have to.