An Improved SOI MESFET with Triple-Recessed Drift Region for Electrical Performance Improvement

摘要

In this paper, a novel SOI MESFET with triple-recessed source drain drift region is proposed and its DC and RF characteristics are investigated in detail. The results show that the breakdown voltage, output power density, and current gain improved significantly. So the proposed structure which has superior electrical performances can be used as a high speed and high power device.