Image sensor having dielectric layer which allows first impurity region of photodiode to be isolated from contact plug and second impurity region of the photodiode to contact the contact plug

摘要

An image sensor and a method of manufacturing the same. An image sensor may include a first interlayer dielectric layer having a first metal wiring and/or a bonding silicon including impurity regions on and/or over a first interlayer dielectric layer. An image sensor may include a second interlayer dielectric layer formed on and/or over a bonding silicon, and/or a first contact plug connected to a first metal wiring. An image sensor may include a third interlayer dielectric layer on and/or over a second interlayer dielectric layer, a second contact plug connected to a first impurity region and/or a second metal wiring on and/or over a second interlayer dielectric layer. An image sensor may include and a color filter layer and/or a microlens. A dielectric layer may be between a first contact plug and a first impurity region. A dielectric layer may be on and/or over a second interlayer dielectric layer.