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Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof
Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof
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机译:在相变存储单元正下方具有掩埋导线的相变存储器件及其制造方法
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摘要
A phase change memory device having buried conduction lines directly underneath phase change memory cells is presented. The phase change memory device includes buried conduction lines buried in a semiconductor substrate and phase change memory cells arranged on top of the buried conductive lines. By having the buried conduction lines directly underneath the phase change memory cells, the resultant device can realize a considerable reduction in size.
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