机译:使用相变电桥设备测量的相变存储材料的阈值场
I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany IBM/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;
IBM/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;
IBM/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;
IBM/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;
I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany IBM/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;
I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany;
机译:使用相变电桥器件表征相变存储材料
机译:非晶硫芥子生成剂的野外依赖电导率和阈值切换 - 卵形阈值开关和相变存储器件的模拟
机译:评论“相变存储器件中通过电场引起的结晶进行阈值切换”物理来吧100,253105(2012)]
机译:(邀请的)ALD的相变和下一代非易失性存储器设备的阈值开关材料
机译:相变存储器设备中的瞬态相位变化效果
机译:重新定义AgInSbTe器件的时间分辨陡峭阈值切换动力学揭示的相变存储器的速度极限
机译:对“关于“通过电场在相变存储器件中引起结晶的阈值切换”的评论”的响应。物理来吧102,236101(2012)]