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Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
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机译:基于钙钛矿导体掺杂钙钛矿绝缘体半导体组成的电阻切换存储器
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摘要
Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
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