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Method for forming a multiple layer passivation film and a device incorporating the same
Method for forming a multiple layer passivation film and a device incorporating the same
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机译:形成多层钝化膜的方法和包含该钝化膜的装置
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摘要
A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, depositing a layer of carbon nitrogen on the semiconductor device surface, introducing a silicon source into the reactor after the carbon source, and depositing a layer of silicon carbon nitrogen on the carbon nitrogen layer. A semiconductor device incorporating the multiple layer passivation film is also described.
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