首页> 外国专利> ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING

ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING

机译:化学机械抛光中同一平台上厚度变化的多个基体的终点控制

摘要

A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
机译:使用在线计量站测量的第一预抛光厚度和第二预抛光厚度,确定第一基板的第一预期所需抛光时间与第二基板的第二预期所需抛光时间之间的差。基于第一预期所需抛光时间与第二预期所需抛光时间之间的差来确定初始时段的持续时间。对于抛光操作开始时的初始阶段,不对第一基板和第二基板中的任何一个施加较小的预期所需抛光时间,而同时对第一基板和第二基板中的任何一个施加压力。预期的抛光时间更长。在初始时间段之后,将压力施加到第一基板和第二基板两者。

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