Aminovinylsilane for cvd and ald sio2 films

摘要

This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:R¹_nR²_mSi(NR³R⁴)_4-n-m; and,a cyclic silazane of (R¹R²SiNR³)_p,where R¹ is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R² is selected from H, alkyl with C₁-C₁₀, linear, branched, or cyclic, an alkenyl with C₂-C₁₀ linear, branched, or cyclic, and aromatic; R³ and R⁴ are selected from H, alkyl with C₁-C₁₀, linear, branched, or cyclic, an alkenyl with C₂-C₁₀ linear, branched, or cyclic, and aromatic, or are joined such that NR³R⁴ is a cyclic amine; n=1-3, m=0-2; p=3-4.