AMINOVINYLSILANE FOR CVD AND ALD SIO2 FILMS

摘要

PURPOSE: Amino vinyl silane for an SiO2 film formed by CVD(Chemical Vapor Deposition) and ALD(Atomic Layer Deposition) is provided to increase the number of wafers processed through a single driving process by loading the wafers in a wafer holder along the axis of a CVD reactor so that the wafers can be evenly heated. CONSTITUTION: A low-pressure thermal CVD method is as follows. A first precursor for providing a silicon source is selected from the group consisting of ring-shaped silazane of R^1nR^2mSi(NR^3R^4)4-n-m and (R^1R^2SiNR^3)p and transferred to a low-pressure thermal CVD reactor. A second precursor for providing an oxygen source is transferred to the reactor. The first and second precursors react under a pressure of 100mT or 1T at a temperature of 400-700C.