AMINOVINYLSILANE FOR CVD AND ALD SiO2 FILMS

摘要

This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R 1 n R 2 m Si(NR 3 R 4 ) 4-n-m ; and, a cyclic silazane of (R 1 R 2 SiNR 3 ) p , where R 1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R 2 is selected from H, alkyl with C 1 -C 10 , linear, branched, or cyclic, an alkenyl with C 2 -C 10 linear, branched, or cyclic, and aromatic; R 3 and R 4 are selected from H, alkyl with C 1 -C 10 , linear, branched, or cyclic, an alkenyl with C 2 -C 10 linear, branched, or cyclic, and aromatic, or are joined such that NR 3 R 4 is a cyclic amine; n=1-3, m=0-2; p=3-4.