Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012−1013 cm−2), which is especially beneficial for p− and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150–250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.
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机译：基于Al 2 O 3 的表面钝化方案可以提高硅太阳能电池的效率。 Al 2 O 3 的关键区别在于高固定负电荷密度（Q f = 10 12 −10 13 cm −2 ），这对p-和p +型c-Si尤其有利，因为它导致高水平的场效应钝化。在这里，我们讨论通过等离子体原子层沉积（ALD），热ALD（使用H 2 合成）制备的Al 2 O 3 表面钝化膜的性能。 O作为氧化剂）和PECVD。我们将证明，使用这三种方法，在150-250°C的衬底温度下沉积的Al 2 O 3 都可以获得高水平的表面钝化。此外，将简要介绍化学钝化和场效应钝化的作用。结论是，Al 2 O 3 的钝化性能对结构性能的变化相对不敏感。因此，Al 2 O 3 是用于硅表面钝化的非常可靠的解决方案。
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