Memory circuit, display device and electronic equipment each comprising the same

摘要

A thin film transistor memory circuit used had a reduction and stop of the same problems and the response speed of the yield (yield) of a memory circuit due to variations in the transistors. An object of the present invention is to improve the yield and the response speed of the memory cell by driving the word line by the logical amplitude of the voltage is different from the memory cell. The invention can be applied to SRAM, DRAM, mask ROM. The memory circuit of the present invention is formed integrally with a display apparatus for realizing a multi-functional display. ; A thin film transistor, a memory circuit, a display device, the yield, the memory cell