Plasma reactor for changing selectively combination structure of inductive coils according to predetermined etching condition, and etching method using the plasma reactor

摘要

plasma to selectively change the geometry of the inductive coil in accordance with the conditions set etch and etch reactor using the same method is disclosed. Etching method using a plasma reactor according to the present invention includes the steps of changing the number or arrangement of the inductive coil which is connected to the, RF power supply source based on the first etching conditions; By applying RF source power to the inductive coil, generating a high density plasma reaction chamber therein; Etching the target object first etching target layer by the high-density plasma; Step of stopping the application of the RF source power to the inductive coil; Step of changing the number or arrangement of the inductive coil which is connected to the, RF power supply source based on the second etching conditions; By applying RF source power to the inductive coil, the reaction chamber generating a low-density plasma therein; Etching the second etching target layer of water to be treated by the low density plasma; And a step of stopping the application of the RF source power to the inductive coil. According to the invention, the uniformity of the process is obtained, the etching process may be performed for different conditions in a row within a reaction chamber.