PLASMA REACTOR FOR CHANGING SELECTIVELY COMBINATION STRUCTURE OF INDUCTIVE COILS ACCORDING TO PREDETERMINED ETCHING CONDITIONS, AND ETCHING METHOD USING THE PLASMA REACTOR, CAPABLE OF SECURING THE UNIFORMITY OF A PROCESS

摘要

PURPOSE: A plasma reactor for changing selectively combination structure of inductive coils according to predetermined etching conditions, and etching method using the plasma reactor are provided to perform etching processes having different conditions consecutively in one reaction chamber. ;CONSTITUTION: A reaction chamber(110) comprises a body(111) and a dielectric window(112). An ICP source power part(120) induces an electric field inside the dielectric window. An RF source power supply unit(121) comprises a matching circuit(124) for matching impedance and an RF source power generator. An inductive coil controller(122) comprises a plurality of switches(S1~S4) and a switch control part(125). The RF source power generator generates the RF source power in response to the source power control signal(CTL11) which is received from the main control unit(140).;COPYRIGHT KIPO 2011