cqvip:This study investigated the inductively coupledplasma etching reactor and RF coils developed by NorthMicroelectronic Corporation. Full three dimensional simulationswere made at different discharge conditions. Thesimulations examined and compared the distribution andnon-uniformity of several plasma parameters at a fixed positionupon the wafer at different pressures and coil currents.These parameters included electron density, electron temperatureand power deposition. The results demonstrate that theelectron density, power deposition and uniformity increasewith either higher pressure or stronger coil currents, while theelectron temperature decreases at this condition. Coil numberincrease can reduce the non-uniformity of parametersin the spatial distribution. The linear relationship betweenpower deposition and electron density does not always exist.The comparison between simulation results and experimentresults is also presented in the paper.
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