CIRCUIT FOR GENERATING A SENSED SIGNAL FOR CHANGING THE DRIVING FORCE OF A DATA OUTPUT BUFFER AND A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A circuit for generating a sensed signal and a semiconductor memory device are provided to control the operation of an internal circuit according to the level variation of an outer voltage in a power-up section.;CONSTITUTION: A voltage dividing unit(10) generates a distribution voltage by voltage-dividing an outer voltage with. A comparison signal generating unit(11) generates a comparison signal by comparing a distribution voltage with a reference voltage. A decoding unit(12) generates a first and second sensing signal by decoding the comparison signal.;COPYRIGHT KIPO 2012