SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING CRACK GENERATION ON THE SURFACE OF A THIN FILM

摘要

PURPOSE: A semiconductor device is provided to increase stress compensation effects due to an intermediate layer by effectively reducing penetration potential through a masking layer, thereby reducing tensile stress and defect density.;CONSTITUTION: A first nitride semiconductor layer(12) is arranged on a substrate. A masking layer(13) is arranged on the first nitride semiconductor layer. A second nitride semiconductor layer(14) is arranged on the masking layer. An intermediate layer(15) is arranged on the second nitride semiconductor layer. A third nitride semiconductor layer(16) is arranged on the intermediate layer.;COPYRIGHT KIPO 2012