Characteristics of surface and interface for ITO/PTCDA/p-Si thin film device

摘要

Interface characteristics possess very important influence on the performance of thin film devices.ITO/PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method.The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy (XPS) and argon ion beam etch techniques.Results indicate that at the interface of ITO/PTCDA/p-Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion.Moreover,the XPS spectra of each atom appear chemical shifts,and the chemical shifts of C1s and O1s are more remarkable.