首页> 中文期刊> 《半导体光子学与技术:英文版》 >XPS Analysis of Surface and Interface States for PTC DA/ p-Si Heterojunction

XPS Analysis of Surface and Interface States for PTC DA/ p-Si Heterojunction

         

摘要

The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.

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