首页> 外国专利> METHOD FOR REPAIRING THE REAR SIDE OF A PHOTO-MASK CAPABLE OF POLISHING THE ENTIRE REAR SIDE OF THE PHOTO-MASK BY FORMING A PROTECTIVE FILM ON THE FRONT SIDE OF THE PHOTO-MASK

METHOD FOR REPAIRING THE REAR SIDE OF A PHOTO-MASK CAPABLE OF POLISHING THE ENTIRE REAR SIDE OF THE PHOTO-MASK BY FORMING A PROTECTIVE FILM ON THE FRONT SIDE OF THE PHOTO-MASK

机译:通过在光掩膜的前侧形成保护膜来修复能够抛光光掩膜的整个后侧的光掩膜的后侧的方法

摘要

PURPOSE: A method for repairing the rear side of a photo-mask is provided to improve the efficiency of a repairing process and to eliminate inefficiency of a repairing process due to partial polishing by using existing equipment.;CONSTITUTION: Optical patterns are formed on the front side of a photo-mask(110). A defect region on the rear side of the photo-mask is inspected. A pattern protective layer(120) is formed on the entire front side of the photo-mask. The rear side of the photo-mask, which includes a scratch region, is completely polished. During the formation of the pattern protective layer, a photo-sensitive material layer is coated and cured to form the pattern protective layer. During the polishing operation, a chemical mechanical polishing operation is implemented.;COPYRIGHT KIPO 2012
机译:目的:提供一种修复光掩模背面的方法,以提高修复工艺的效率,并消除由于使用现有设备进行局部抛光而导致的修复工艺效率低下的问题。光掩模(110)的正面。检查光掩模背面上的缺陷区域。在光掩模的整个正面上形成图案保护层(120)。光掩模的背面(包括划痕区域)已完全抛光。在图案保护层的形成过程中,光敏材料层被涂覆并固化以形成图案保护层。在抛光操作过程中,将执行化学机械抛光操作。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120056925A

    专利类型

  • 公开/公告日2012-06-05

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20100088906

  • 发明设计人 CHO IL HWAN;

    申请日2010-09-10

  • 分类号G03F1/72;H01L21/027;H01L21/304;H01L21/308;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:58

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