PHOTO-MASK AND A METHOD FOR MANUFACTURING THE SAME CAPABLE OF PROTECTING LIGHT SHIELDING PATTERNS FROM ACID SOLUTIONS BY FORMING A PROTECTIVE FILM PATTERN ON THE SIDEWALL OF THE LIGHT SHIELDING PATTERN

摘要

PURPOSE: A photo-mask and a method for manufacturing the same are provided to improve the reliability of a semiconductor device manufacturing process by being repeatedly used without the line width change of patterns.;CONSTITUTION: A method for manufacturing a photo-mask includes the following: a light shielding pattern(115) and a reflection preventive film pattern(125) are successively stacked on a transparent substrate(100). The light shielding pattern is based on at least one of chrome(Cr), aluminum(Al), rubidium(Ru), tantalum(Ta), tantalum boron oxide(TaBO), and tantalum boron nitride(TaBN). The sidewall of the light shielding pattern is oxidized and nitrided to form a protective film pattern(135) based on plasma treatment. The plasma treatment uses oxygen gas and nitrogen gas as reactive gas. The mixed ratio of the oxygen gas and the nitrogen gas is in a range between 5 and 8. The temperature of a chamber for the plasma treatment is kept in a range between 200 and 400 degrees Celsius.;COPYRIGHT KIPO 2012