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CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERNED WAFER AND A POLISHING METHOD USING THE SAME HAVING SELECTIVITY OF POLISHING RATE TO A TUNGSTEN METAL FILM AND AN INSULATIVE FILM, AND A POLISHING METHOD USING THE SAME
CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERNED WAFER AND A POLISHING METHOD USING THE SAME HAVING SELECTIVITY OF POLISHING RATE TO A TUNGSTEN METAL FILM AND AN INSULATIVE FILM, AND A POLISHING METHOD USING THE SAME
PURPOSE: A CMP(chemical mechanical polishing) slurry composition is provided to remove defects like protrusion, stepped height, edge over erosion, scratch, dishing, SEAM stack, erosion, etc in two polishing steps and to improve planarity.;CONSTITUTION: A CMP(chemical mechanical polishing) slurry composition comprises abrasive, a Fe(3+) compound or complex compound, a water-soluble polymer, and an amino acid. The abrasive composition has the polishing rate of a tungsten metal layer of 200-600 Å/min, and the polishing rate of an insulating layer is 600-1500 Å/min. The comprised amount of the Fe3+ compound or the complex compound is 0.1-1.5 weight% based on the composition.;COPYRIGHT KIPO 2012
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机译：目的：提供一种CMP（化学机械抛光）浆料组合物，以在两个抛光步骤中去除缺陷，例如凸起，台阶高度，磨蚀边缘，划痕，凹陷，SEAM叠层，腐蚀等，并改善平面度。 （化学机械抛光）浆料组合物包含磨料，Fe（3+）化合物或复合化合物，水溶性聚合物和氨基酸。该磨料组合物的钨金属层的抛光速度为200-600埃/分钟，绝缘层的抛光速度为600-1500埃/分钟。 Fe 3+化合物或络合物的含量基于组成为0.1-1.5重量％。; COPYRIGHT KIPO 2012
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