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METHOD FOR MANUFACTURING A MASK OF A SEMICONDUCTOR DEVICE CAPABLE OF REDUCING USAGE COUNT OF ARF IMMERSION EQUIPMENT
METHOD FOR MANUFACTURING A MASK OF A SEMICONDUCTOR DEVICE CAPABLE OF REDUCING USAGE COUNT OF ARF IMMERSION EQUIPMENT
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机译:制造能够减少ARF浸入设备使用次数的半导体设备的掩膜的方法
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摘要
PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to improve a DoF margin of a cutting mask by changing a partition mask into a dogbon pattern shape.;CONSTITUTION: A first sensitive film pattern of a dogbon shape is formed. Spacers are formed at the sidewall of the first sensitive film pattern. The spacers comprise a nitride film. A second sensitive film pattern is formed between the spacers. The second sensitive film pattern is a negative sensitive film. The spacers are eliminated. A first pattern is formed by etching the second sensitive film pattern by using a cutting mask as an etching mask. An isolation pattern(270) is formed by etching the first pattern by using a pad mask as the etching mask.;COPYRIGHT KIPO 2012
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