首页> 外国专利> RESIST FILM, RESIST COATED MASK BLANKS INCLUDING THE SAME, A METHOD FOR FORMING RESIST PATTERNS USING THE SAME, AND A CHEMICALLY AMPLIFIED RESIST COMPOSITION CAPABLE OF IMPROVING DRY ETCHING RESISTANCE AND LINE EDGE ROUGHNESS CHARACTERISTIC

RESIST FILM, RESIST COATED MASK BLANKS INCLUDING THE SAME, A METHOD FOR FORMING RESIST PATTERNS USING THE SAME, AND A CHEMICALLY AMPLIFIED RESIST COMPOSITION CAPABLE OF IMPROVING DRY ETCHING RESISTANCE AND LINE EDGE ROUGHNESS CHARACTERISTIC

机译:抗蚀膜,包括相同涂层的抗蚀剂涂膜毛坯,使用相同涂层形成抗蚀剂图案的方法以及能够增强干刻蚀阻力和线边缘粗糙度特性的化学增强的抗蚀剂成分

摘要

PURPOSE: A resist film, a resist coated mask blanks including the same, a method for forming resist patterns using the same, and a chemically amplified resist composition are provided to include a polymer compound in which the hydrogen atom of the phenolic hydroxyl group is substituted with a pre-determined group.;CONSTITUTION: A resist film is formed based on a chemically amplified resist composition. The chemically amplified resist composition includes a polymer compound, a compound generating acid based on the irradiation of active rays or radiation rays, and an organic solvent. The polymer compound includes a structure in which the hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by chemical formula 1. In chemical formula 1, R1 is a hydrocarbon group; R2 is a hydrogen atom or a hydrocarbon group; Ar is an aryl group; R1 and Ar are capable of forming a cyclic with/without a hetero atom; and * is the bonding position of the phenolic hydroxyl group and an oxygen atom.;COPYRIGHT KIPO 2013
机译:目的:提供一种抗蚀剂膜,包括其的抗蚀剂涂覆的掩模坯料,使用其形成抗蚀剂图案的方法,以及化学放大的抗蚀剂组合物,其包括其中酚羟基的氢原子被取代的高分子化合物。组成:组成:抗蚀剂膜是基于化学放大的抗蚀剂成分形成的。化学放大的抗蚀剂组合物包括高分子化合物,基于活性射线或放射线的照射而产生酸的化合物以及有机溶剂。高分子化合物具有酚羟基的氢原子被化学式1表示的基团取代的结构。化学式1中,R 1为烃基,R 1为烃基。 R 2为氢原子或烃基; Ar是芳基; R1和Ar能够与/不与杂原子形成环状; *为酚羟基与氧原子的键合位置。; COPYRIGHT KIPO 2013

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