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METHOD FOR MANUFACTURING A LIGHT EMITTING DIODE STRUCTURE WHICH USES AN ELECTROLESS PLATING METHOD

机译:使用无电电镀法制造发光二极管结构的方法

摘要

PURPOSE: A method for manufacturing a light emitting diode is provided to form an electro-less plating layer having reliability by providing a pretreatment process capable of increasing adhesive force with a bottom seed layer.;CONSTITUTION: A light emitting structure including a first gallium nitride-based compound layer, a light emission layer, and a second gallium nitride-based compound layer is formed(410). A light transmission electrode layer pattern including a top electrode contact part on the second gallium nitride-based compound layer is formed(420). A bottom electrode contact part which partially exposes the first gallium nitride-based compound layer is formed(430). A seed layer pattern is respectively formed on the bottom electrode contact part and the top electrode contact part(440). The surface of the seed layer pattern is reformed(450). A top electrode layer and bottom electrode layer are respectively formed on the seed layer pattern with an electro-less plating method(460).;COPYRIGHT KIPO 2013;[Reference numerals] (410) A light emitting structure including a first gallium nitride-based compound layer, a light emission layer, and a second gallium nitride-based compound layer is formed; (420) A top electrode contact part including a light transmission electrode layer pattern is formed on the second gallium nitride-based compound layer of the light emitting structure; (430) A bottom electrode contact part which partially exposes the first gallium nitride-based compound layer is formed; (440) A seed layer pattern is formed on the bottom electrode contact part and the top electrode contact part; (450) The surface of the seed layer pattern is reformed using liquid which contains at least one selected in a group of CH(CH2)nO-SO3-X(n=5, X=H,Na,Li or K) and at least one selected in a group of Y-OH, Y2-CO3, and Y2-SiO3(Y=Na or K); (460) A top electrode layer and a bottom electrode layer are formed on the seed layer pattern with an electro-less plating method; (AA) Start; (BB) End
机译:目的:提供一种用于制造发光二极管的方法,以通过提供能够增加与底部籽晶层的粘附力的预处理工艺来形成具有可靠性的化学镀层;组成:包括第一氮化镓的发光结构形成铝基化合物层,发光层和第二氮化镓基化合物层(410)。在第二氮化镓基化合物层上形成包括顶部电极接触部分的透光电极层图案(420)。形成部分暴露第一氮化镓基化合物层的底部电极接触部分(430)。种子层图案分别形成在底部电极接触部分和顶部电极接触部分(440)上。种子层图案的表面被重整(450)。通过无电镀方法分别在籽晶层图案上形成顶部电极层和底部电极层(460)。; COPYRIGHT KIPO 2013; [附图标记](410)包括第一氮化镓基的发光结构。形成化合物层,发光层和第二氮化镓基化合物层。 (420)在发光结构的第二氮化镓类化合物层上形成具有透光电极层图案的上部电极接触部。 (430)形成部分暴露第一氮化镓基化合物层的底部电极接触部分; (440)在下部电极接触部和上部电极接触部上形成种子层图案。 (450)使用含有至少一种选自CH(CH2)nO-SO3-X(n> = 5,X = H,Na,Li或K)和选自Y-OH,Y 2 -CO 3和Y 2 -SiO 3(Y = Na或K)中的至少一个; (460)通过化学镀法在籽晶层图案上形成顶部电极层和底部电极层; (AA)开始; (BB)结束

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