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METHOD FOR MANUFACTURING A LIGHT EMITTING DIODE STRUCTURE WHICH USES AN ELECTROLESS PLATING METHOD
METHOD FOR MANUFACTURING A LIGHT EMITTING DIODE STRUCTURE WHICH USES AN ELECTROLESS PLATING METHOD
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机译:使用无电电镀法制造发光二极管结构的方法
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PURPOSE: A method for manufacturing a light emitting diode is provided to form an electro-less plating layer having reliability by providing a pretreatment process capable of increasing adhesive force with a bottom seed layer.;CONSTITUTION: A light emitting structure including a first gallium nitride-based compound layer, a light emission layer, and a second gallium nitride-based compound layer is formed(410). A light transmission electrode layer pattern including a top electrode contact part on the second gallium nitride-based compound layer is formed(420). A bottom electrode contact part which partially exposes the first gallium nitride-based compound layer is formed(430). A seed layer pattern is respectively formed on the bottom electrode contact part and the top electrode contact part(440). The surface of the seed layer pattern is reformed(450). A top electrode layer and bottom electrode layer are respectively formed on the seed layer pattern with an electro-less plating method(460).;COPYRIGHT KIPO 2013;[Reference numerals] (410) A light emitting structure including a first gallium nitride-based compound layer, a light emission layer, and a second gallium nitride-based compound layer is formed; (420) A top electrode contact part including a light transmission electrode layer pattern is formed on the second gallium nitride-based compound layer of the light emitting structure; (430) A bottom electrode contact part which partially exposes the first gallium nitride-based compound layer is formed; (440) A seed layer pattern is formed on the bottom electrode contact part and the top electrode contact part; (450) The surface of the seed layer pattern is reformed using liquid which contains at least one selected in a group of CH(CH2)nO-SO3-X(n=5, X=H,Na,Li or K) and at least one selected in a group of Y-OH, Y2-CO3, and Y2-SiO3(Y=Na or K); (460) A top electrode layer and a bottom electrode layer are formed on the seed layer pattern with an electro-less plating method; (AA) Start; (BB) End
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