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Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AIGaN-based ultraviolet light-emitting diodes

机译:纳米级Ni嵌入式单壁碳纳米管通过化学镀透明电镀375nm Aigan紫外发光二极管的透明导电电极

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We propose a nanoscale Ni-embedded single-wall carbon nanotube (SWCNT) composite for transparent conductive electrodes (TCEs) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). TCEs specifically for the ultraviolet region were developed using Ni selectively electroless-plated SWCNTs. The nanoscale Ni of TCEs improved electrical conductivity and formed ohmic contact with p-GaN while minimizing transmittance loss. We applied Ni-embedded SWCNTs, SWCNTs, and Ni/Au to the TCEs of 375nm UV LEDs. UV LEDs with Ni-embedded SWCNTs showed a 32% higher output power than UV LEDs with conventional Ni/Au TCEs. (C) 2016 The Japan Society of Applied Physics
机译:我们提出了一种纳米级Ni嵌入式单壁碳纳米管(SWCNT)复合材料,用于透明导电电极(TCES)的基于AlGaN的紫外光发光二极管(UV LED)。使用Ni选择性无电镀SWCNTS开发专门针对紫外区域的表现形式。 TCCS的纳米级NI改善了电导率和与P-GaN的欧姆接触,同时最小化透射率损失。我们将Ni-Embedded SWCNTS,SWCNT和NI / AU应用于375nm紫外LED的TCE。具有Ni-Embedded SWCNT的UV LED显示出比具有传统NI / AU TCES的UV LED的输出功率高32%。 (c)2016年日本应用物理学会

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    《Annales de l'I.H.P》 |2016年第8期|082601.1-082601.4|共4页
  • 作者单位

    Chonnam Natl Univ Optoelect Convergence Res Ctr Gwangju 500757 South Korea|Korea Photon Technol Inst Photon Device Res Ctr Gwangju 500779 South Korea;

    Chonnam Natl Univ Optoelect Convergence Res Ctr Gwangju 500757 South Korea|LG Innotek Components & Mat R&D Ctr Seoul 137724 South Korea;

    Chonnam Natl Univ Optoelect Convergence Res Ctr Gwangju 500757 South Korea;

    Korea Photon Technol Inst Photon Device Res Ctr Gwangju 500779 South Korea;

    Chonnam Natl Univ Optoelect Convergence Res Ctr Gwangju 500757 South Korea;

    Sunchon Natl Univ Sunchon 540742 Jeonnam South Korea;

    Chonnam Natl Univ Optoelect Convergence Res Ctr Gwangju 500757 South Korea;

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