METHOD AND APPARATUS EMPLOYING INTEGRATED METROLOGY FOR IMPROVED DIELECTRIC ETCH EFFICIENCY

摘要

The semiconductor wafer processing method and apparatus, and then the test wafer will receive process information related to a lower layer thickness measured at several spots on the photoresist mask CD and profile, and the wafer in order to control (for example an etching process) Feed forward and is provided in order to decrease the dimensional change. After the process step, the information measuring the dimensions of the structure formed by the process, such as CD, and the depth of the trench formed by the process at several points on the wafer, to further reduce the dimensional change to control the processor to turn on the next wafer The process feedback tool. In certain embodiments, be performed in a single module in the CD, profile, thickness and depth measurements, an etching process, and a post-etch cleaning a controlled environment. To perform all of transferring and processing steps performed by the module in the clean environment, to prevent exposure of the wafer on the possible contamination between the air and a step of increasing the yield. ; Wafer, measuring tool, etcher, dielectric