DEFLECTING ACCELERATION/DECELERATION GAP

摘要

Accelerating structure and associated method for accelerating / decelerating the ions in the ion beam is disclosed. The structure and associated method are suitable for use selectively implanting ions to the workpiece or wafer during semiconductor manufacturing to selectively doped with an area of ​​the wafer. In addition to accelerate and / or decelerate ions, application of the present invention serves to deflect as well as to focus the ions of the ion beam. This is achieved by an ion beam that is routed through the electrode potential is generated. The ion beam is also, without the electrically neutral contaminants not affected by the potential of contamination is eliminated because it continues to move along the original path of the ion beam. Electrode also being arranged in a way that minimizes the distance to move the beam, to mitigate the possibility of beam blow eopdoel. ; The electronic control device, a mass analyzer, plasma source, a target scanning system, the end station