GaN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GaN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GaN SEMICONDUCTOR FILM

摘要

In the GaN-based semiconductor optical device (11a), main surface (13a) of the substrate 13, the 1 is inclined from the plane perpendicular to the reference axis (Cx), which extends along the axis c of the GaN-based semiconductor by a tilt angle of the first to the m-axis direction of the GaN-based semiconductor 63 is also less than 80 degrees. GaN-based semiconductor epitaxial region 15 is provided on the main surface (13a),. GaN-based semiconductor epitaxial region (15) above the active layer 17 are provided. The active layer 17 may include at least one semiconductor epitaxial layer 19 a,. Semiconductor epitaxial layer 19 is made of InGaN. The film thickness direction of the semiconductor epitaxial layer (19) is inclined with respect to the reference axis (Cx),. The reference axis (Cx) is heading the [0001] axis direction of the 1 GaN-based semiconductor. Thus, the lowering of the luminescence properties according to the In segregation in the active layer is suppressed to provide a GaN-based semiconductor light-emitting device.