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In situhole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

机译：通过双靶同时激光消融宽间隙半导体的情况下掺杂：GaN和SiC外延薄膜

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Hachizo Muto; Takashi Asano; Rong-Ping Wang; Takeshi Kusumori;
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1. In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films [J] . Hachizo Muto, Takashi Asano, Rong-Ping Wang, Applied Physics Letters . 2005,第16期

机译：双靶同时激光烧蚀宽禁带半导体的原位空穴掺杂：GaN和SiC外延膜
2. Fabrication and characterization of wuestite-based epitaxial thin films: p-type wide-gap oxide semiconductors composed of abundant elements [J] . Munetoshi Seki, Masanao Takahashi, Masaki Adachi, Applied Physics Letters . 2014,第11期

机译：钙钛矿型外延薄膜的制备与表征：由丰富元素组成的p型宽能隙氧化物半导体
3. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films [J] . S A Kukushkin, A V Osipov Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第31期

机译：Si在SiC上生长的理论与实践及其在宽禁带半导体膜中的应用
4. Monocrystalline beta -SiC semiconductor thin films: epitaxial growth, doping, and FET device development [C] . Bumgarner, J.W., Kong, Electronics Components Conference, 1988., Proceedings of the 38th . 1988

机译：β-SiC单晶半导体薄膜：外延生长，掺杂和FET器件开发
5. Transport properties and superconductivity of lanthanum-doped strontium titanate thin films grown by laser ablation. [D] . Olaya, David. 2003

机译：激光烧蚀生长镧掺杂钛酸锶锶薄膜的传输性质和超导性。
6. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC [O] . Andreea Bianca Serban, Vladimir Lucian Ene, Doru Dinescu, 2021

机译：在（111）3C-SIC上生长的外延ALN / GAN薄膜缺陷结构研究
7. Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln = La, Pr, and Nd; Ch = S or Se) semiconductor alloys [O] . Hiramatsu Hidenori, Ueda Kazushige, Takafuji Kouhei, 2003

机译：LnCuOCh（Ln = La，Pr和Nd; Ch = S或Se）半导体合金的宽间隙p型氧硫族化物外延膜的本征激子光致发光和带隙工程
8. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films [R] . Lowndes, D. H. , Rouleau, C. M. , Geohegan, D. B. , 1995

机译：脉冲激光烧蚀生长和外延化合物半导体薄膜的掺杂

In situhole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

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