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Method for aligning nanowires, 3-dimensional frame for aligning nanowires, and method for 3-dimensional frame for aligning nanowires

机译:用于对准纳米线的方法,用于对准纳米线的3维框架以及用于对准纳米线的3维框架的方法

摘要

PURPOSE: A method for aligning nano-wires using a groove structure, a three dimensional frame for aligning the nano-wires, and a method for manufacturing the three dimensional frame are provided to efficiently align the nano-wires on a desired position in a nano-wire element manufacturing process. CONSTITUTION: A substrate(201) with a three dimensional structure is prepared. Pluralities of trench grooves, in which both inner walls thereof are inclined, are formed in the three dimension structure. A nano-wires(10) dispersed solution is arranged on the three dimensional structure. The solution is dried to align nano-wires in the trench groove along the longitudinal direction of the trench groove. The trench grooves are parallelly expanded. The cross section shapes of the trench grooves are V-shapes or truncated type inverted pyramid shapes.
机译:目的:提供一种使用凹槽结构对准纳米线的方法,用于对准纳米线的三维框架以及制造三维框架的方法,以有效地将纳米线对准在纳米中的所需位置上。线元件的制造过程。组成:准备具有三维结构的基板(201)。在三维结构中形成了多个沟槽,其中两个沟槽的内壁都倾斜。将纳米线(10)分散溶液布置在三维结构上。将溶液干燥以使纳米线沿着沟槽的纵向方向在沟槽中对准。沟槽平行地扩展。沟槽的横截面形状为V形或截头型倒金字塔形。

著录项

  • 公开/公告号KR101165447B1

    专利类型

  • 公开/公告日2012-07-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100012875

  • 发明设计人 이태윤;이슬아;서정목;

    申请日2010-02-11

  • 分类号B82B3;B82B1;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:46

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