Semiconductor memory device and command input method of the semiconductor memory device

摘要

The present invention discloses a command input method of the semiconductor memory device and a semiconductor memory device. Command input method of the semiconductor memory device and a semiconductor memory device of the present invention is applied from the outside to receive a plurality of command pins to the plurality of command signal, and generating a secondary command and basic commands by decoding the command signal is applied via the command pin , and if the basic instruction and the sub-commands are generated in a row characterized in that it comprises a command decoder for generating and outputting the internal extension instruction corresponding to the combination of said basic instruction and said auxiliary command. Therefore, when the main command signal and the auxiliary command signal to be continuously applied to perform a separate operation and applied only when the main command signal, increasing the number of pins, or even if the received command is a command other than the command pin to the pin number and to generate the expansion of the command. Not only because the period in which the command signal is not applied is fixed, it is possible to increase the efficiency of the semiconductor memory device.