Semiconductor nanoheterostructures InAlAs / InGaAs With METAMORFORNYM BUFFER

摘要

The invention relates to a semiconductor MNEMT (metamorphic high electron mobility transistor) nanogeterostruktur used to manufacture transistors and microwave monolithic integrated circuits with high operating frequency and high breakdown voltages.; Object of the present utility model is to increase the operating frequency of the microwave transistors fabricated on the basis nanogeterostruktur high InAs in an active region grown on GaAs substrates. The technical result, which allows to execute a task, is to reduce the density of dislocations penetrating into the active region nanoheterostructures.; Technical result is achieved due to the fact that in the semiconductor nanogeterostruktur metamorphic InAlAs / InGaAs (2) consisting of a monocrystalline semi-insulating substrate is GaAs (1) superlattice AlGaAs / GaAs (2), a buffer layer GaAs (3), metamorphic buffer In _x Al _1-x As (4) the thickness of 1.0 ÷ 1.5 micron with a linear increase InAs x content x in thickness from ₁ to x _4, where x ₁ = 0, x ₄ ≥0.75, depletion region In _x Al _1-x As (5) with gradual reduction InAs x content in thickness from ₄ x ₄ to x 'where x ₄ -x _4' = 0.03 ÷ 0.08, heal with a uniform layer of the composition In _{x4 'Al1-x4'} As (6), the active region of InAlAs / InGaAs (7) with a high holding InAs (70%) agreed on the lattice parameter with heals layer inside metamorphic buffer (4) at equal distances from each other and from the buffer boundaries introduces two inverse layers (9 and 12) with a smooth decrease InAs x content across the thickness at Δx = 0.03 ÷ 0.06, each of which must be healed layer (10 and 13) with a composition matching the composition of the final inversion layer.