首页> 外国专利> Method for material removal processing of sides of semiconductor wafers in e.g. microelectronics, involves bringing side of wafer in contact with sandpaper, so that material removal from side of wafer is caused in processing step

Method for material removal processing of sides of semiconductor wafers in e.g. microelectronics, involves bringing side of wafer in contact with sandpaper, so that material removal from side of wafer is caused in processing step

机译:用于例如半导体晶片的侧面的材料去除处理的方法。微电子学包括使晶圆的一面与砂纸接触,从而在加工步骤中导致从晶圆的一面去除材料

摘要

The method involves bringing a side of a semiconductor wafer in contact with a sandpaper, so that material removal from a side of the semiconductor wafer is caused in a processing step. The semiconductor wafer is turned, and another side of the semiconductor wafer is brought in contact with the sandpaper, so that material removal from another side of the semiconductor wafer is caused in another processing step. Friction forces exerted on the semiconductor wafer or a rotor disk by different layers are reduced by adding viscous media e.g. hydraulic colloid, polyose or polyol.
机译:该方法包括使半导体晶片的侧面与砂纸接触,从而在处理步骤中导致从半导体晶片的侧面去除材料。转动半导体晶片,并使半导体晶片的另一侧与砂纸接触,从而在另一处理步骤中引起从半导体晶片的另一侧的材料去除。通过添加粘性介质,例如,通过不同的层,减小了由不同的层施加在半导体晶片或转子盘上的摩擦力。液压胶体,多糖或多元醇。

著录项

  • 公开/公告号DE102010042040A1

    专利类型

  • 公开/公告日2012-04-12

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号DE20101042040

  • 发明设计人 SCHWANDNER JUERGEN;PIETSCH GEORG DR.;

    申请日2010-10-06

  • 分类号H01L21/304;B24B7/16;

  • 国家 DE

  • 入库时间 2022-08-21 17:05:24

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