Electronic device, has transistor's control gate connected between power supply and diode-connected transistor, where transistor has doping type opposite to doping type of p-type metal oxide semiconductor transistor

摘要

The device (1) has an operational amplifier with a p-type metal oxide semiconductor (PMOS) transistor (PAMP) of a doping type. A transistor (N1) is connected with a channel as a feedback path between an output (OUT) of the amplifier and a control gate of the PMOS transistor. A diode-connected transistor (N2) i.e. n-type MOS (NMOS) transistor, is connected with the channel between a power supply and the output. A control gate of the transistor is connected between the supply and the diode-connected transistor. The transistor has a doping type opposite to the doping type of the PMOS transistor. An independent claim is also included for a method for biasing an amplifier.