首页> 外国专利> Semiconductors - package, comprising a substrate - feedthrough (tsv -) has poser interference and method for producing the semiconductor - package

Semiconductors - package, comprising a substrate - feedthrough (tsv -) has poser interference and method for producing the semiconductor - package

机译:半导体-包括衬底的封装-穿通线(tsv-)具有发射极干涉并且制造该半导体-封装的方法

摘要

The package (1) has an interposer (120) formed from a semiconductor material or a glass material and comprising pads (124) formed on its upper surface. A lower semiconductor chip (130) is attached at the interposer. An upper semiconductor device (200) has a lower surface on which terminals (270, 280) are formed. The device has conductive bumps with lower and upper sections arranged on the upper surface of the interposer and extending to the lower surface of the device. The bumps connect one of the pads to the corresponding terminal on the lower surface of the device. An independent claim is also included for a method for producing a semiconductor package.
机译:封装(1)具有由半导体材料或玻璃材料形成的中介层(120),并且中介层(120)包括在其上表面上形成的焊盘(124)。下部半导体芯片(130)被附接到内插器。上半导体器件(200)具有在其上形成端子(270、280)的下表面。该器件具有导电凸块,其下部和上部布置在插入件的上表面上并延伸到器件的下表面。凸块将焊盘之一连接到设备下表面上的相应端子。还包括用于制造半导体封装的方法的独立权利要求。

著录项

  • 公开/公告号DE102011055018A8

    专利类型

  • 公开/公告日2012-10-25

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号DE20111055018

  • 发明设计人 CHUNG-SUN LEE;YUN-SEOK CHOI;

    申请日2011-11-03

  • 分类号H01L23/50;H01L21/58;H01L21/60;H01L23/28;H01L25/04;H01L25/18;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:56

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