首页>
外国专利>
Producing scandium-aluminum-nitride film, useful e.g. for a light emitting layer of a light emitting diode, comprises sputtering a scandium-aluminum alloy target in a nitrogen gas atmosphere to separate a thin film on a substrate
Producing scandium-aluminum-nitride film, useful e.g. for a light emitting layer of a light emitting diode, comprises sputtering a scandium-aluminum alloy target in a nitrogen gas atmosphere to separate a thin film on a substrate
Producing scandium-aluminum-nitride film, comprises sputtering a scandium-aluminum alloy target in a nitrogen gas atmosphere to separate a thin film on a substrate.
展开▼