Circuit integrated a mos transistor pairs electrostatically and advantages of such a circuit integrated

摘要

Integrated circuit (100) comprising at least a first transistor (101a) of mos type in which is disposed at least a second transistor (101b) of the mos type, a channel region (109b) is formed in at least one layer (104b) based on a semi - conductor comprising two main faces (106b, 108b) substantially parallel, and comprising at least a portion (117) of at least one electrically conductive material which is electrically connected to a grid (113a) of the first transistor and is disposed between the gate of the first transistor and the channel region of the second transistor, the section of the channel region of the second transistor in a plane parallel to the two main faces of the layer based on a semiconductor - conductor being included in the section of the portion of the electrically conductive material sprayed in the said plane.