首页> 外国专利> To dispose of impurities residual extrinsic in a substrate made of zno or znmgo of the n type, and for carrying out a p type doping of this substrate.

To dispose of impurities residual extrinsic in a substrate made of zno or znmgo of the n type, and for carrying out a p type doping of this substrate.

机译:为了在由n型的zno或znmgo制成的衬底中处理残留的非本征杂质,并对该衬底进行p型掺杂。

摘要

Method of purification of a substrate made of zno and / or znmgo of the n type in order to reduce or eliminate the residual impurities temperature of the substrate with a view of the p type doping of at least a portion of the substrate, in which it is introduced into at least one zone of the substrate at least one reactive species having a high chemical affinity, with at least one of the extrinsic impurities and / or being capable of creating the crystalline defects, and it is thus created in the substrate at least one so-called "getter " zone capable of trapping the impurities in the residual temperature and / or in which the residual impurities extrinsic are trapped; and an annealing of the substrate in order to diffuse the residual impurities extrinsic towards the zone" getter " and / or out of the zone "getter ", preferably to at least one surface of the substrate. Method of preparation of a substrate made of zno and / or znmgo with p type doping, comprising at least one step of purification of a substrate made of zno and / or znmgo by the method above ci -.
机译:鉴于至少一部分衬底的p型掺杂,纯化由n型zno和/或znmgo制成的衬底的方法,以降低或消除衬底的残留杂质温度。将至少一种具有高化学亲和力的反应性物种引入到衬底的至少一个区域中,其中至少一种具有非本征杂质和/或能够产生结晶缺陷,并且因此至少在衬底中产生一个所谓的“吸气”区,它能够在残留温度下捕获杂质和/或在其中捕获非本征的残留杂质;为了使残余杂质向“吸气剂”区域和/或从“吸气剂”区域,优选地向衬底的至少一个表面扩散,对衬底进行退火。制备具有p型掺杂的由zno和/或znmgo制成的基底的方法,包括通过以上ci-的方法纯化由zno和/或znmgo制成的基底的至少一个步骤。

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