PHASE SHIFT MASK AND RESIST PATTERN FORMATION METHOD USING PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a phase shift mask using an exposure device for manufacturing a conventional image display unit, capable of highly accurately forming a predetermined resist pattern having a dimension below a resolution limit of the exposure device on a work piece such as a transparent substrate, and a resist pattern formation method employing the phase shift mask.;SOLUTION: A phase shift mask for resist pattern formation with a design dimension below a resolution limit of an exposure device includes: a transparent substrate; a phase shift part for applying a predetermined phase difference to exposure light from the exposure device; and a non phase shift part neighboring the phase shift part. At least one of the phase shift part and the non phase shift part has a dimension below a resolution limit of the exposure device. The dimension of the phase shift part is different from that of the non phase shift part. The length of one side of a pattern area including the phase shift part and the non phase shift part on the transparent substrate is 300 mm or larger. A light shielding part with a dimension below the resolution limit of the exposure device does not exist at least within the pattern area.;COPYRIGHT: (C)2013,JPO&INPIT