首页> 外国专利> INDUCTIVE COUPLING PLASMA SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT

INDUCTIVE COUPLING PLASMA SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT

机译:等离子体均匀性和效率增强的电感耦合等离子体源设计

摘要

PROBLEM TO BE SOLVED: To provide an inductive coupling plasma reactor having an enclosure where at least part of the ceiling forms a dielectric window.;SOLUTION: A substrate support 215 is disposed within an enclosure 200 below a dielectric window 207. An RF power applicator 240 is disposed above the dielectric window to apply RF power through the dielectric window into the enclosure. A plurality of gas injectors 230, 235 are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle 270 is disposed inside the enclosure and disposed above the substrate support but below the plurality of gas injectors so as to restrict the flow of the processing gas.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种感应耦合等离子体反应器,该感应耦合等离子体反应器具有至少在顶部的一部分形成介电窗的外壳。解决方案:衬底支撑件215置于介电窗207下方的外壳200内。RF功率施加器240设置在介电窗上方,以将RF功率通过介电窗施加到外壳中。多个气体喷射器230、235均匀地分布在基板支架上方,以将处理气体供应到外壳中。圆形挡板270设置在外壳内部,并设置在基板支架上方但在多个注气器下方,以限制处理气体的流量。版权所有:(C)2013,JPO&INPIT

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