WET ETCHING METHOD OF SILICON WAFER AND WET ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a wet etching method and a wet etching device of a silicon wafer in which a constant etching rate can be maintained by adding only one acid, in view of the fact that a prescribed etching rate can be maintained by maintaining one concentration at a constant level even if the other concentration changes in a certain range.;SOLUTION: When the concentration of hydrofluoric acid for obtaining a prescribed etching amount is a first hydrofluoric acid concentration, and the concentration of nitric acid for obtaining a prescribed etching amount is a first nitric acid concentration, the wet etching method of a silicon wafer includes an etching step for using a chemical having the concentration of nitric acid higher than the first nitric acid concentration and the hydrofluoric acid concentration of the first hydrofluoric acid concentration for etching, and an addition step for adding hydrofluoric acid having a concentration higher than the first hydrofluoric acid concentration to the chemical used in the etching step. The chemical after the addition step is used again for etching.;COPYRIGHT: (C)2013,JPO&INPIT