WET ETCHING METHOD FOR SINGLE CRYSTAL SiC WAFER, WET ETCHING SOLUTION, AND WET ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a wet etching method capable of properly removing process-induced damage in a single crystal SiC wafer in a temperature region that is substantially lower as compared with the conventional ones, a wet etching solution, and a wet etching device.SOLUTION: An etching method for a single crystal SiC wafer according to the present invention is characterized in that a single crystal SiC wafer is wet etched using a wet etching solution containing KMnOand NaOH. The wet etching solution preferably has a mass ratio of KMnO, NaOH and HO of KMnO:NaOH:HO=1:2-13:4-27, and a temperature of 50-140°C.SELECTED DRAWING: Figure 3