首页> 外国专利> Wet etching apparatus for semiconductor device manufacturing and etching solution circulating method in wet etching apparatus

Wet etching apparatus for semiconductor device manufacturing and etching solution circulating method in wet etching apparatus

机译:用于半导体器件制造的湿蚀刻设备以及湿蚀刻设备中的蚀刻溶液循环方法

摘要

The present invention relates to a wet etching apparatus for manufacturing a semiconductor device and a method for circulating an etchant in a wet etching apparatus that smoothes the circulation of the etching liquid and prevents the byproducts from etching from contacting the wafer during etching.;A wet etching apparatus for manufacturing a semiconductor device according to the present invention includes an inner bath 11 in which a wafer to be etched is received, an outer bath 12 connected to the upper side of the inner bath 11, A circulation pipe 13 connected to the upper part of the inner tank 11 to circulate the etching solution through the circulation pipe 12 and a pump 14 mounted on the circulation pipe 13 for circulating the etching solution.;Therefore, according to the present invention, it is possible to prevent re-contamination of the wafer during the etching process by particles or the like which may be generated during the etching process.
机译:技术领域本发明涉及一种用于制造半导体器件的湿蚀刻设备以及一种在湿蚀刻设备中循环蚀刻剂的方法,该湿蚀刻设备使蚀刻液的循环平滑并防止在蚀刻过程中副产物蚀刻与晶片接触。根据本发明的用于制造半导体器件的蚀刻设备包括:内部槽11,其内容纳待蚀刻的晶片;外部槽12,其连接至内部槽11的上侧;循环管13,其连接至上部内槽11的一部分使蚀刻液循环通过循环管12和泵14,泵14安装在循环管13上以使蚀刻液循环。因此,根据本发明,可以防止再污染。在蚀刻过程中,晶片会被在蚀刻过程中可能产生的颗粒等污染。

著录项

  • 公开/公告号KR19990003266A

    专利类型

  • 公开/公告日1999-01-15

    原文格式PDF

  • 申请/专利权人 윤종용;

    申请/专利号KR19970027094

  • 发明设计人 이승건;

    申请日1997-06-25

  • 分类号H01L21/306;

  • 国家 KR

  • 入库时间 2022-08-22 02:18:15

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