VERTICAL TYPE PLANAR POWER MOSFET MANUFACTURING METHOD AND TRENCH GATE TYPE POWER MOSFET MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve a problem in a method for manufacturing a super junction type power MOSFET having a drift region of super junction structure that, when a body region, etc. are introduced and thermal treatment related thereto is executed after forming a super junction structure as will normally executed, the dopant of a p-column region, etc. constituting the super junction structure spreads and a dopant profile thereby becomes desultory, giving rise to deterioration in voltage withstanding between the drain and source at reverse bias time and an increase in on-resistance.SOLUTION: The present invention relates to a method for manufacturing a silicon based vertical type planar power MOSFET in which the formation of a body region constituting a channel region is accomplished by selective epitaxial growth.